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| DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513). PINNING - SOT23 1 2 3 = gate = drain = source MARKING CODE BF510 = S6p BF511 = S7p BF512 = S8p BF513 = S9p BF510 to 513 handbook, halfpage 3 d s g 1 Top view 2 MAM385 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Drain-source voltage Drain current (DC or average) Total power dissipation up to Tamb = 40 C Drain current VDS = 10 V; VGS = 0 Transfer admittance (common source) VDS = 10 V; VGS = 0; f = 1 kHz Feedback capacitance VDS = 10 V; VGS = 0 VDS = 10 V; ID = 5 mA Noise figure at optimum source admittance GS = 1 mS; -BS = 3 mS; f = 100 MHz VDS = 10 V; VGS = 0 VDS = 10 V; ID = 5 mA F F typ. typ. 1.5 - 1.5 - - 1.5 - dB 1.5 dB Crs Crs typ. typ. 0.3 - 0.3 - - 0.3 - pF 0.3 pF yfs > 2.5 4 6 7 mS IDSS Ptot max. BF510 > < 0.7 3.0 250 511 2.5 7.0 512 6 12 513 10 mA 18 mA mW VDS ID max. max. 20 30 V mA December 1997 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage (open source) Drain current (DC or average) Gate current Total power dissipation up to Tamb = 40 C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note 1. Mounted on a ceramic substrate of 8 mm x 10 mm x 0.7 mm. STATIC CHARACTERISTICS Tamb = 25 C BF510 Gate cut-off current -VGS = 0.2 V; VDS = 0 Gate-drain breakdown voltage IS = 0; -ID = 10 A Drain current VDS = 10 V; VGS = 0 Gate-source cut-off voltage ID = 10 A; VDS = 10 V -V(P)GS typ. 0.8 1.5 IDSS -V(BR)GDO > > < 20 0.7 3.0 20 2.5 7.0 -IGSS < 10 10 511 512 Rth j-a = VDS VDGO ID IG Ptot Tstg Tj BF510 to 513 max. max. max. max. max. max. 20 V 20 V 30 mA 10 mA 250 mW 150 C -65 to + 150 C 430 K/W 513 10 20 6 12 10 nA 20 V 10 mA 18 mA 2.2 3V December 1997 3 Philips Semiconductors Product specification N-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS Measuring conditions (common source): y-parameters (common source) Input capacitance at f = 1 MHz Input conductance at f = 100 MHz Feedback capacitance at f = 1 MHz Transfer admittance at f = 1 kHz VGS = 0 instead of ID = 5 mA Transfer admittance at f = 100 MHz Output capacitance at f = 1 MHz Output conductance at f = 1 MHz Output conductance at f = 100 MHz Noise figure at optimum source admittance GS = 1 mS; -BS = 3 mS; f = 100 MHz F typ. 1.5 1.5 Cis gis Crs yfs yfs yfs Cos gos gos < typ. typ. < > > typ. < < typ. BF510 to 513 VDS = 10 V; VGS = 0; Tamb = 25 C for BF510 and BF511 VDS = 10 V; ID = 5 mA; Tamb = 25 C for BF512 and BF513 BF510 5 100 0.4 0.5 2.5 - 3.5 3 60 35 511 5 90 0.4 0.5 4.0 - 5.5 3 80 55 512 5 60 0.4 0.5 4.0 6.0 5.0 3 100 70 513 5 pF 50 S 0.4 pF 0.5 pF 3.5 mS 7.0 mS 5.0 mS 3 pF 120 S 90 S 1.5 1.5 dB handbook, halfpage 1.5 MDA275 handbook, halfpage Crs (pF) 1 10 |yfs| MDA276 BF513 BF512 (mS) 8 BF511 6 BF510 4 0.5 typ 2 0 0 4 8 12 16 20 VDS (V) 0 0 5 10 ID (mA) 15 Fig.2 VGS = 0 for BF510 and BF511; ID = 5 mA for BF512 and BF513; f = 1 MHz; Tamb = 25 C. Fig.3 VDS = 10 V; f = 1 kHz; Tamb = 25 C; typical values. December 1997 4 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 handbook, halfpage 300 MDA245 Ptot (mW) 200 100 0 0 40 80 120 200 160 Tamb (C) Fig.4 Power derating curve. December 1997 5 Philips Semiconductors Product specification N-channel silicon field-effect transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads BF510 to 513 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 December 1997 6 Philips Semiconductors Product specification N-channel silicon field-effect transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values BF510 to 513 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 7 |
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